SK34AH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 3 A
Electronic components
GD2X25MPS17N
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 50A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
SS24H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 400 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
VS-U5FX120FA120
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 60A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
RBR2MM40BTFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 80 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 2 A
VS-U5FH120FA60
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 60A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
SK320A
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A
VS-U5FH150FA60
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 75A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
ES15DLWH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1.5 A
C4D30120D
- Manufacturer
- Wolfspeed, Inc.
- Current - Average Rectified (Io) / diode
- 21.5A
- Operating Temperature - Junction
- -55°C ~ 175°C
US1M-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
VS-U5FX150FA60
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 75A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
V3NL63-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 60 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 3 A
S3GBHE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
VS-U5FX60FA120
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
ES2D_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
VS-U5FX120FA60
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 60A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
MER3DMB_R2_00601
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A