VS-1EAH02HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 970 MV @ 1 A
Electronic components
BAS40-04
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
SS24HE3-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 2 A
BAV99S_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -55°C ~ 150°C
BAV170W_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
NRVS1AFL
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MMBD7000W_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG6010CEJF
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 660 MV @ 1 A
BAT54C_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
B120-E3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 1 A
BAV199_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS85-GS18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
BAS40CW_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
NSR02F30NXT5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 200 MA
BAS40-05
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
SD103AW-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
BAV23S
- Manufacturer
- Good-Ark Semiconductor
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- -55°C ~ 150°C
LS101A-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA