PMEG100T030ELPE-QZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 2.5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 710 MV @ 3 A
Electronic components
RB218T-30NZC9
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 150°C
EGP10B
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
RB088T-60NZC9
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C
VS-3EYH02HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A
RB218T-40NZC9
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 150°C
SS13
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
VBT10200C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
S3D-E3/57T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 2.5 A
RB088T-30NZC9
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C
NRVS3MB
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
RBQ10NS100AFHTL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
ES2GHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
RB088T-40NZC9
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C
RBR3LAM60ATR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 660 MV @ 3 A
VB20150C-E3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
SK345A-LTP-HF
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
RB228NS-30FHTL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- 150°C (Max)