BAT46WJ,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 9 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 250 MA
Electronic components
DSEI2X30-10B
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
ES2J-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 2 A
VS-VSKC91/04
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 50A
- Operating Temperature - Junction
- -40°C ~ 150°C
D4600U45X172XPSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 25 MA @ 4500 V
- Voltage - Forward (Vf) (Max) @ If
- 2 V @ 2500 A
APT2X101DQ100J
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 175°C
APTDF500U40G
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2.5 MA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 500 A
VS-UFB80FA20
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.08 V @ 30 A
S2M-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
MDMA140P1600TG
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 140A
- Operating Temperature - Junction
- -40°C ~ 150°C
B0520LW-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 250 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 385 MV @ 500 MA
DSEP2X61-06A
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-300U30A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 40 MA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 942 A
VS-150UR100D
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 MA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.47 V @ 600 A
VS-QA250FA20
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 175°C
CUS08F30,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 220 MV @ 10 MA
DD100N16SHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 130A
- Diode Configuration
- 1 Pair Series Connection
UES1104
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A