Electronic components
CD214B-FS3K
- Manufacturer
- Bourns Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 3 A
STPS30170CG-TR
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- 175°C (Max)
BAS316-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
S16DSD2
- Manufacturer
- Diotec Semiconductor
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -50°C ~ 150°C
BAV99/8,235
- Manufacturer
- NXP USA Inc.
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
MBRB10200CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 175°C
1N4150TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
VS-MBRB20100CTR-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
G20H100CTW
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
1SS427,L3M
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 500 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
SBR2045CT-G
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
NRVBA210LNT3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 700 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 350 MV @ 2 A
RB530SM-30T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 NA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 10 MA