VX60M153PWHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
Electronic components
1N4148WS-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
VS-40L15CW-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 125°C (Max)
V20PWM63HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 35 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 670 MV @ 20 A
NTE629
- Manufacturer
- NTE Electronics, Inc
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -65°C ~ 175°C
MMDL770T1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 NA @ 35 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
VS-40CPQ040-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- 150°C (Max)
10MQ040N
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 540 MV @ 1 A
SBR60A300CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 175°C
V30KM100HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 300 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 810 MV @ 30 A
NTE630
- Manufacturer
- NTE Electronics, Inc
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -65°C ~ 175°C
1N4148WS-HG3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
SBR40U100CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -65°C ~ 150°C
NRVTS12120MFST3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 75 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 830 MV @ 12 A
VX60M153PW-M3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
BAV20WS-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
VI20202C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
MBRAD15100H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 15 A