NTE5942
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 MA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 15 A
Electronic components
DAP202U-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -55°C ~ 150°C
US1R_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 1300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.9 V @ 1 A
MMBD3004S-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 225mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
NTE116-10
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
CDST-99-HF
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RSX051VYM30FHTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 390 MV @ 500 MA
BAS40-05-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C
VS-30EPF06-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.41 V @ 30 A
BAS70-06-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- 150°C
CUS15S40,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
BAW56T-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 75mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
SS110LSH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 50 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 1 A
BAS70-06 RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
NTE5837
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
BAT54SW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
BAT54WS-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
BAT54AW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)