RB706F-40
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30mA
- Operating Temperature - Junction
- 125°C
Electronic components
VS-1N1184
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 MA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 110 A
BAV23C-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BAW156Q-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 160mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
RB558VAM150TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 500 MA
BAS21C RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5847
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
BAS21AW-QX
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C
BAS45A,113
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 NA @ 125 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
BAV170E6433HTMA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
CDLL5819/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 50 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 1 A
NSVM1MA141WAT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
S2AA-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
MMBD717C_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-1N3673A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 600 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 12 A
MMBD4448HTC-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- 150°C
B160-E3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A
BAS21A RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C