ST12100S
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 300 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 12 A
Electronic components
V10PWM10CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 175°C
MBR890DC_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -65°C ~ 175°C
1N4454-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
CMS01(TE12L,Q,M)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 5 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 3 A
V15KM150C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.7A
- Operating Temperature - Junction
- -40°C ~ 175°C
1N4004GH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
MBR10100CT-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
DFLS160Q-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
MBR880DC_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -65°C ~ 175°C
S1K-M3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRD20200CTH-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
SS36
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 3 A
V10PW12CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
S1A-M3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
SS10P4CHM3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS3H10HE3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 3 A
V15KM100C-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4.5A
- Operating Temperature - Junction
- -40°C ~ 175°C