BAS21VMTE-17
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
Electronic components
V30M120M-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 175°C
BAT42W-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 50 MA
VBT3060C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 150°C
BAT64C-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 2 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 100 MA
HER1005GH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS40L2-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 200 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
GP1606
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
NSR05T30P2T5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 85 µA @ 30 V
- Operating Temperature - Junction
- -55°C ~ 150°C
SRF1660H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
BA158-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
VT1080C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
SMD23PE-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 2 A
VBT1045C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
V1F6HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 270 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 1 A
BAV20WS-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
MBRS1045CTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
LS103C-GS18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA