ES1DV
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
Electronic components
MBR30150CT-Y
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
MUR60120B-BP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 15 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 3.3 V @ 60 A
MBR2535CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
HS2KFL
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 2 A
VS-16CTQ080-1HM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 175°C
MSC010SDA120B
- Manufacturer
- Microchip Technology
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
- Reverse Recovery Time (trr)
- 0 Ns
SRF16150H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
SK24AH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
SDT40A120CTFP
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
STPSC5H12D
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 30 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 5 A
ER3BB-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A
FEPB16BT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-E5PX7506L-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 25 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 75 A
FEPB16CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
SF1JDF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
RF2001T2D
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
VS-EPU6006-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 60 A