VS-MBRB2090CTHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
Electronic components
ESGLW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
VS-MBR2035CTHN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
RB162LAM-40TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
VB20120C-M3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
HS2FA
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1.5 A
VS-MBRB2535CT-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
MBR30100CT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYS10-45HE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 45 V
- Operating Temperature - Junction
- -65°C ~ 150°C
VF20202G-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
ES1LD
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
VS-16CTQ100-1HM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 175°C
SS23MH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 150 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 2 A
VB20120C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
SA2K-E3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
VS-25CTQ035STRR-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
S07J-M-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
RB205T-60
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- 150°C (Max)