ERT2BAFC_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
Electronic components
MURS360S-M3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.45 V @ 3 A
SF1606PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
S3AFGHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
HER1606PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
MURS140-M3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
VS-61CTQ035-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 175°C
SL02-M-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 250 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 420 MV @ 1.1 A
LQA32T300C
- Manufacturer
- Power Integrations
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- 150°C (Max)
RB055L-40TE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 3 A
MBR4035PT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -65°C ~ 150°C
CD214B-B240R
- Manufacturer
- Bourns Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
VS-42CTQ030SHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
B360AQ-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 3 A
NTST20120CTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
B360B-M3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 660 MV @ 3 A
VS-30CTQ045STRRHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 175°C
NSVR0230P2T5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 200 MA