VS-3C06ET07S2L-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 35 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 6 A
Electronic components
1N4247GP-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
MSRT150120A
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
SFAF1008G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 10 A
GSXD080A018S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 80A
- Operating Temperature - Junction
- -40°C ~ 150°C
BYC20X-600PQ
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 20 A
1N4148UBCA
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 200°C
GP10B-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MDD72-14N1B
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 113A
- Operating Temperature - Junction
- -40°C ~ 150°C
FFSD0865A
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.75 V @ 8 A
GSXD080A008S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 80A
- Operating Temperature - Junction
- -40°C ~ 150°C
GP10-4005-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Technology
- Standard
- Voltage - DC Reverse (Vr) (Max)
- 600 V
APT2X100D40J
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 175°C
GP08G-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
JAN1N4148UBCCC
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 1A
- Operating Temperature - Junction
- -65°C ~ 200°C
WNSC2D10650BJ
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 50 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 10 A
APT2X60D40J
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 60A
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 60 A
EGP10A-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A