JANTXV1N4148UBD
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 200°C
Electronic components
RS1BLHR3G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
MSRT150100AD
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAT54QCZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
GSXD120A010S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 120A
- Operating Temperature - Junction
- -40°C ~ 150°C
RB021VA90TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 900 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 200 MA
MBR2X100A200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N4045
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 15 MA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 300 A
ES2CHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 2 A
300CNQ035
- Manufacturer
- SMC Diode Solutions
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBR2X100A120
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -40°C ~ 150°C
NDSH50120C
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.75 V @ 50 A
MUR2X030A04
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
BYG24J-E3/TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1.5 A
MSRT250160A
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
PCDP20120G1_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 180 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 20 A
MBR2X100A080
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N5822H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 525 MV @ 3 A