S4PJHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 4 A
Electronic components
MD165K16D2-BP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 165A
- Operating Temperature - Junction
- -40°C ~ 150°C
S4PBHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 4 A
VS-VSKCS401/045
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 175°C
SD103B-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
APT2X100D120J
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 93A
- Operating Temperature - Junction
- -55°C ~ 175°C
M5060CC400
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -40°C ~ 125°C
S5DHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 5 A
ESH1GM RSG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A
DHG100X650NA
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 125A
- Operating Temperature - Junction
- -40°C ~ 150°C
AR1PKHM3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 1 A
VS-VSKCS440/030
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 220A
- Operating Temperature - Junction
- -55°C ~ 150°C
SB160-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
MBR2X030A060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
SS15L RUG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 400 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
MBR2X120A180
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 120A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N4148WT
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
DHG100X1200NA
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 50A
- Operating Temperature - Junction
- -40°C ~ 150°C