VS-VSKD236/12PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 115A
- Operating Temperature - Junction
- -40°C ~ 150°C
Electronic components
MA3J7440GL
- Manufacturer
- Panasonic Electronic Components
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 200 MA
VS-VSKD166/14PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 82.5A
- Operating Temperature - Junction
- -40°C ~ 150°C
V6PWM12-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 830 MV @ 6 A
201CMQ050
- Manufacturer
- SMC Diode Solutions
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 175°C
SS13-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
VS-VSKC166/12PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 165A
- Diode Configuration
- 1 Pair Common Cathode
CMR3U-06 BK PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 3 A
FST100200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 50A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N4151WS-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 50 MA
VS-VSKDF500/06PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 772A (DC)
- Operating Temperature - Junction
- -40°C ~ 175°C
SB540L_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 5 A
MSCD200-12
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 200A
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 300 A
1N4148WS-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
FST10045
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
PG601R_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 6 A
VS-VSKD166/04PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 82.5A
- Operating Temperature - Junction
- -40°C ~ 150°C
HS1D R3G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A