VS-VSKC196/12PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 97.5A
- Operating Temperature - Junction
- -55°C ~ 175°C
Electronic components
S5DHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 5 A
FST10040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
MUR310S
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Operating Temperature - Junction
- -55°C ~ 175°C
286-822
- Manufacturer
- WAGO Corporation
- Current - Average Rectified (Io) / diode
- 5.1mA
- Operating Temperature - Junction
- -25°C ~ 40°C
PMEG4002ESFYL
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 6.5 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
300CMQ035
- Manufacturer
- SMC Diode Solutions
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
ES2DA R3G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
ESH3B
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Operating Temperature - Junction
- -55°C ~ 175°C
FST10060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS40L-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
FST100100
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 100 A
MUR305SB
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 3 A
MBRT12035R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAV20WS-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
FST10030
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 100 A
MUR340SB
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
MSRT25080A
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C