ES1FL RUG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
Electronic components
F1892RD1000
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 90A (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
BAS381-TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 NA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
MBR40020CTR
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
ES1FL
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBRT40020
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
MSRTA600100A
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 600A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
HS1KAL
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
SK510B
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 5 A
F1827RD1400
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 25A (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
MBR30045CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB501SM-30T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 350 MV @ 10 MA
SBR8E60P5-7D
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 580 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 8 A
MSRTA30080AD
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRT300200R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS3D-E3/9AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 2.5 A
MURT40010R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYG10D-E3/TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A