F18107RD1200
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 105A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.65 V @ 300 A
Electronic components
V6PWL45HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 700 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 6 A
APTDF400AK120G
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 470A
- Voltage - Forward (Vf) (Max) @ If
- 3 V @ 400 A
VS-1EAH02-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 970 MV @ 1 A
MBRT300100
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
S10KC-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 10 A
S4A
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 4 A
JANTXV1N5712UBCC
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 75mA
- Operating Temperature - Junction
- -65°C ~ 150°C
MURTA20040R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG1030EH,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 3 MA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 3 A
B370Q-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 70 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 3 A
F1827CCD600
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 25A (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
MPG06D-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
286-826
- Manufacturer
- WAGO Corporation
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -25°C ~ 40°C
MURT40010
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYW53-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
MDD255-12N1
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 270A
- Operating Temperature - Junction
- -40°C ~ 150°C
BAT54WS-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA