SE30PAJHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.16 V @ 3 A
Electronic components
JANTXV1N5712UBCA/TR
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 75mA
- Operating Temperature - Junction
- -65°C ~ 150°C
SB120
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 500 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
MURT30010R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYT54B-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A
RBR1LAM60ATFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 75 µA @ 60 V
- Operating Temperature - Junction
- 150°C (Max)
MBRT60035R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
ESH2PC-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 2 A
F1892CAD1200
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 90A (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
BY527TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.65 V @ 10 A
MURTA400120
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
NSVBAS70LT1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 70 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
F1857RD1600
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 55A (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
BYT54B-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A
MBRT40030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
SDMG0340L-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA
F18107RD1600
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 105A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.65 V @ 300 A
BY527TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.65 V @ 10 A