NRVBAF260T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 630 MV @ 2 A
Electronic components
F18107RD1400
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 105A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.65 V @ 300 A
SDT12A120P5-13D
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 12 A
MBRT60040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5406G A0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
MURTA600120
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
SMMSD914T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
VS-VSKJ320-12PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 160A
- Operating Temperature - Junction
- -40°C ~ 150°C
6A100GH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 6 A
MSRTA300160AD
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
MURS160BJ
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
MBRT60030
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
CBS10S30,L3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
JANTX1N7039CCU1
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 35A
- Operating Temperature - Junction
- -65°C ~ 150°C
VS-6ESU06-M3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 6 A
MURTA60060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS2G-E3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1.5 A
BYX84TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A