BAT54CW
- Manufacturer
- Diotec Semiconductor
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
Electronic components
STTH110
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
BAV99W
- Manufacturer
- Diotec Semiconductor
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG3020EPASX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 2.5 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 2 A
BAT54A
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
6A8G-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 6 A
BAV99L
- Manufacturer
- Diotec Semiconductor
- Operating Temperature - Junction
- -55°C ~ 150°C
- Voltage - DC Reverse (Vr) (Max)
- 100 V
PMEG6030EP/8X
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 3 A
DD250S65K3C1NPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 250A (DC)
- Operating Temperature - Junction
- -50°C ~ 125°C
ES5J-T
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 5 A
DD250S65K3NOSA1
- Manufacturer
- Infineon Technologies
- Operating Temperature - Junction
- -50°C ~ 125°C
- Voltage - Forward (Vf) (Max) @ If
- 3.5 V @ 250 A
BYR5D-1200PJ
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 50 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 5 A
MSCDC450A120AG
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 450A
- Operating Temperature - Junction
- -40°C ~ 175°C
VS-2EYH02HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 930 MV @ 2 A
DD175N32KHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 223A
- Operating Temperature - Junction
- -40°C ~ 150°C
V10P8-M3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 800 µA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 680 MV @ 10 A
JANTXV1N7037CCU1/TR
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 35A
- Operating Temperature - Junction
- -65°C ~ 150°C
RGL34J-E3/98
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 500 MA