SS29LH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 2 A
Electronic components
MBRB20200CT
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
S12MC V7G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 12 A
MUR2060CT
- Manufacturer
- Diotec Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -50°C ~ 175°C
TSSA5U60H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 300 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 560 MV @ 5 A
MBR20200CD
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
RF081L2STFTE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 1.1 A
BAS40-04
- Manufacturer
- Diotec Semiconductor
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
BYT53F-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
NXPS20H100CX,127
- Manufacturer
- NXP USA Inc.
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 175°C (Max)
RGL41J-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAT54S-AQ
- Manufacturer
- Diotec Semiconductor
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
ES3AHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 3 A
MBR10200CD
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
MMDL6050T1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 100 MA
STPS2045CTC
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 175°C
V10PWM12-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 820 MV @ 10 A
NSVR0240HT1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 710 MV @ 200 MA