MBR2545CT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
Electronic components
V20KM100-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 250 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 760 MV @ 20 A
HFA30PA60C
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
NSVR0320XV6T1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 50 µA @ 15 V
- Voltage - Forward (Vf) (Max) @ If
- 270 MV @ 10 MA
MA3X721D0L
- Manufacturer
- Panasonic Electronic Components
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 150°C (Max)
V12P12HM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 830 MV @ 10 A
32CTQ030
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH3R06UFY
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.9 V @ 3 A
BAV70T,115
- Manufacturer
- NXP USA Inc.
- Current - Average Rectified (Io) / diode
- 150mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SL43HE3_B/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 8 A
EGF1C
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
MA3X71600L
- Manufacturer
- Panasonic Electronic Components
- Current - Average Rectified (Io) / diode
- 30mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
BYV29B-600PJ
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 8 A
BAV99-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 300mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
RBR1L40ADDTE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 1 A
MBR3045CT-LJ
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
SE70PBHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 7 A
BAV70-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -65°C ~ 150°C