6CWQ06FN
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.5A
- Operating Temperature - Junction
- -40°C ~ 150°C
Electronic components
BAV23S-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 400mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
TUAS8G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 8 A
V15PM10HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 15 A
BAT54SDW-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -65°C ~ 125°C
TUAS8M
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 8 A
DSSK60-0045A
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
AS3PMHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
BAW56W-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -65°C ~ 150°C
MURS340HE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.28 V @ 3 A
42CTQ030S
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
AS3PJHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
BAW56DW-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -65°C ~ 150°C
MA3S13300L
- Manufacturer
- Panasonic Electronic Components
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
MURS340HE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.28 V @ 3 A
40CTQ045S
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
AS3PDHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
S16-4150E3/TR13
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 400mA
- Operating Temperature - Junction
- -55°C ~ 150°C