VSKC320-12
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 320A
- Diode Configuration
- 1 Pair Common Cathode
Electronic components
40CTQ045
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-6EVH06-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.1 V @ 6 A
6CWQ06FNTR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.5A
- Operating Temperature - Junction
- -40°C ~ 150°C
AR3PDHM3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 3 A
MBR3035WT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
SARS01W
- Manufacturer
- Sanken Electric USA Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1.2 A
6CWQ10FN
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.5A
- Operating Temperature - Junction
- -40°C ~ 150°C
BYT56A-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 3 A
V8PA22HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 8 A
VSKC250-16
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 250A
- Diode Configuration
- 1 Pair Common Cathode
30CTQ060
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-4ECH06-M3/9AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 4 A
42CTQ030STRL
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
UPS140E3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 400 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
SB560-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 5 A
30CTQ035
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 175°C
V3NM153-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 35 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 970 MV @ 3 A