CD6857
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 150 NA @ 16 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 35 MA
Electronic components
MURB1620CT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -65°C ~ 175°C
V20PW10HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 860 MV @ 20 A
52CPQ030
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 25A
- Operating Temperature - Junction
- -55°C ~ 150°C
UFS520JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 5 A
15CTQ035S
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -55°C ~ 150°C
V30DL45BP-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 30 A
401CNQ045
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 175°C
1N4148UR-1E3
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
HFA60MC60C
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 50A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 30 A
HS5F V7G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 5 A
HFA70NC60CSL
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 56A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
SF2006PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 20 A
MBRB2080CT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
V30DL45-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 30 A
HFA80NK40C
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 89A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 80 A
MBRD320T4G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 3 A
HFA30TA60CS
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C