B2100A-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 2 A
Electronic components
RURD620CC
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 6A
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 6 A
STTH812FP
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 8 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 8 A
NSR05F40NXT5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 75 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 460 MV @ 500 MA
MURF1660CT
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -65°C ~ 150°C
BAV70LT1
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
FESF16JT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 16 A
BAV99RWT1
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
PMEG6010CEH,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 660 MV @ 1 A
RFN20TF6SFHC9
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.55 V @ 20 A
BAT54JW-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -65°C ~ 125°C
STTH8R04D
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 8 A
MBRB20H100CT/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
S3K-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
VS-ETX3007THN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 30 A
BAV74LT1
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
BAW156T-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 125mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C