SPB10045E3
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 100A
- Voltage - Forward (Vf) (Max) @ If
- 570 MV @ 100 A
Electronic components
SD360YS_L2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 640 MV @ 3 A
SBR20A60CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
S1MHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRD650CTT4
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
SK54L_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 440 MV @ 5 A
RB162MM-40TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
MBRD640CT
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
APT60D20LCTG
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 175°C
ERT3GAF_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
FST20150E3
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
MURB3J_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
1N5819
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
SPB160100E3
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 160A
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 160 A
SS24M
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 150 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 2 A
V35100C-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 35A
- Diode Configuration
- 1 Pair Common Cathode
SS3060HE-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 3 A
APT30DQ100BCTG
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C