SK36B-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 3 A
Electronic components
DSEC59-03AQ
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
BAT42
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
LD411860
- Manufacturer
- Powerex Inc.
- Current - Average Rectified (Io) / diode
- 600A
- Voltage - Forward (Vf) (Max) @ If
- 1.19 V @ 1800 A
VSSAF510-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 5 A
MSKD120-16
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 120A
- Voltage - Forward (Vf) (Max) @ If
- 1.43 V @ 300 A
MBR1045G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 20 A
MBRB2035CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
RS1M-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
LD410860
- Manufacturer
- Powerex Inc.
- Current - Average Rectified (Io) / diode
- 600A
- Voltage - Forward (Vf) (Max) @ If
- 1.19 V @ 1800 A
MUR820G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 8 A
FEPB6BT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS2103WE6327HTSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
BAR43C
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 150°C (Max)
1N5400G-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
BYQ28EB-100-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
B320A-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
MBRB15H45CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C