S2MHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
Electronic components
SS12P4CHM3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 125°C
ES2DA-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 2 A
UGB10GCTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
NSR05F20NXT5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 75 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 500 MA
BYQ28E-200HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
RB521CS-30T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 350 MV @ 10 MA
SS10P2CLHM3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRAF260T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 630 MV @ 2 A
BAS7002VH6327XTSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
SBLB1630CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -40°C ~ 125°C
MBRB30H45CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
PMEG10020AELRX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 300 NA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 770 MV @ 2 A
UH4PCC-M3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 2A
- Operating Temperature - Junction
- -55°C ~ 175°C
BYG10K-E3/TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
SS2FH10HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 860 MV @ 2 A
UH4PCCHM3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 2A
- Operating Temperature - Junction
- -55°C ~ 175°C
UGB10DCTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C