SS36LW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 3 A
Electronic components
UGB18BCT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 18A
- Operating Temperature - Junction
- -65°C ~ 150°C
STTH102A
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 970 MV @ 1 A
SS8P5CHM3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRS1100T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 500 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A
FEPF16BT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
CMAD4448 TR PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 500 NA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 910 MV @ 100 MA
BYQ28EF-200HE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
STPS140Z
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 40 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
UGB10GCT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
SS1P4L-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 480 MV @ 1 A
FEP6AT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
RBR2MM40CTFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 2 A
MURA110T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 2 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A
SS8P2CLHM3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBR07U20LPS-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 50 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 700 MA
BYQ28EF-100HE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
BYM11-100-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A