MBR2035CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
Electronic components
RFC02MM2STFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 500 MA
MBRB2535CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
STPS1L40U
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 35 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
MBRB15H35CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
TSP15H200S
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 150 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 890 MV @ 15 A
MBR25H60CT-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
TSSW3U60
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 MA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 3 A
MBR15H45CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
1N5401RLG
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
MBRB2060CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
SDT30B100D1-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 120 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 30 A
MBRB1545CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 150°C
MBRB1045-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 20 A
MBRB2035CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
BYV28-150-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 5 A
MBR25H45CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
RR1LAM6STR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A