MBRF10100CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -65°C ~ 150°C
Electronic components
V10P10HM3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 680 MV @ 10 A
MBRB1550CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 150°C
IDK02G120C5XTMA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 18 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.65 V @ 2 A
MBRF2035CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
VSS8D5M15HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 180 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 2.5 A
CMSH3-100MA TR13 PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 500 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 3 A
MBRB2560CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
TRS3E65F,S1Q
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 20 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 3 A
MBRF2535CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
BYG10Y-E3/TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
MBRB10H100CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -65°C ~ 150°C
BYV27-200-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.07 V @ 3 A
MBRF15H45CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
FESB16DT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
MBRB2535CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
VS-8EWS08STR-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 8 A
MBRF20H45CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C