VSSC8L45-M3/9AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1.85 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 420 MV @ 4 A
Electronic components
UGB10DCTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
IDH20G65C6XKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 67 µA @ 420 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 20 A
SBLB2040CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS21GWJ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
UG10FCTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
RS3J-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
UGB10BCTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
IDH12SG60CXKSA2
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.1 V @ 12 A
U30BCT-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-SD3000C10K
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 75 MA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.22 V @ 6000 A
SBLB1640CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -40°C ~ 125°C
AS3BJ-M3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 3 A
UB20CCT-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5806US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A
UG8HCTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
APTDF450U60G
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2.5 MA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 500 A
U16DCT-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C