1N4001-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
Electronic components
BAS70SV
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- -55°C ~ 150°C
MBR10100
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 1 MA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 10 A
FST8345M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 80A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
MBR1045
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 1 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 10 A
CPT60035
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 300A
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 300 A
1N6663US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 50 NA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 400 MA
SR20150-G
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
CTS05S40,L3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 30 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 350 MV @ 100 MA
SBT80-04Y-DL-E
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
TSP12U120S
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 500 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 780 MV @ 12 A
MBRB15H35CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
FFSH20120A-F085
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 1200 V
- Operating Temperature - Junction
- -55°C ~ 175°C
BAV70T116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA
- Operating Temperature - Junction
- 150°C (Max)
1N4148W-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
SBT150-04Y-DL-E
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-15EWX06FNTR-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 3.2 V @ 15 A
APT2X61DC120J
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 60A
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 60 A