RB520SM-30T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 200 MA
Electronic components
MBR50060CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBR2M100SAF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 780 MV @ 2 A
MBR50060CTR
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB500V-40 RRG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 10 MA
VS-12CWQ10FNPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-E5TH1512-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 15 A
VS-MURB1020CTTRRP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -65°C ~ 175°C
SD103BWSQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
MBR50045CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG4010ESBYL
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 40 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 610 MV @ 1 A
MBR50040CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS116UDJ-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-ETL1506S-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.07 V @ 15 A
VS-MBRD660CTTRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -40°C ~ 150°C
MBR50035CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG3005EL,315
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 500 MA