BAS386-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 100 MA
Electronic components
VS-6CWQ10FNTRPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.5A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N5408
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
FMEN-2208
- Manufacturer
- Sanken Electric USA Inc.
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C
S1JHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
VS-12CWQ04FNTRPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
V3FM10-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 85 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 830 MV @ 3 A
FMU-22S
- Manufacturer
- Sanken Electric USA Inc.
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N4005GPE-E3/53
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
VS-40L15CT-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 125°C
S1GHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
FMG-26R
- Manufacturer
- Sanken Electric USA Inc.
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -40°C ~ 150°C
SK510BH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 5 A
DSA240X200NA
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 120A
- Operating Temperature - Junction
- -40°C ~ 150°C
LS103C-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
FMEN-230A
- Manufacturer
- Sanken Electric USA Inc.
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 150°C
RF05VYM1SFHTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 500 MA
VS-30CTH02-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C