V6WL45C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -40°C ~ 150°C
Electronic components
RB068MM-60TFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1.5 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 765 MV @ 2 A
VS-88CNQ060ASMPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C
STPST15H100SB-TR
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 28 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 740 MV @ 15 A
VS-MBRB2080CTTRLP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
SS1200-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 50 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
VS-6CWQ06FNTRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.5A
- Operating Temperature - Junction
- -40°C ~ 150°C
CRS11(TE85L,Q,M)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 1.5 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 360 MV @ 1 A
VS-85CNQ015ASMPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 125°C
SVT20120UB_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 35 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 20 A
VS-MBRB2045CTTRLP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
B140-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 1 A
V12W60C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -40°C ~ 150°C
AU1PG-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A
1N6659
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 15A
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 20 A
SBR1045D1Q-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 10 A
VS-83CNQ080ASLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 175°C
SBR12U100P5Q-13D
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 250 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 780 MV @ 12 A