RBQ30NS45BFHTL
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 350 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 590 MV @ 30 A
Electronic components
VT6045CHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-MBRB2080CTGTRLP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
BYM13-30-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
VS-30CTT100
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- 175°C (Max)
UF4005
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
DTH8R06FP
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 30 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.9 V @ 8 A
VS-40CTQ045-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 150°C (Max)
VS-30CTQ100G-1PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- 175°C (Max)
SDT8A120P5-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 300 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 8 A
VS-MBRB20100CTGTLP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
BAT54E6327HTSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
VT3060GHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
ES1GLW RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
VS-32CTQ025-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- 150°C (Max)
VS-10ETF12STRL-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.33 V @ 10 A
VS-43CTQ100GSTRLP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 175°C (Max)
1N914
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA