ES1D-M3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
Electronic components
GSXD080A006S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 80A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N5627-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
V20D202CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
1N3600UR/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
MBR60045CTRL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
DST1040S-A
- Manufacturer
- Littelfuse Inc.
- Current - Reverse Leakage @ Vr
- 800 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 570 MV @ 10 A
MBR40020CTRL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
CLS10F40,L3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 25 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 570 MV @ 1 A
VT60M120CHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
JANTX1N5619
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 3 A
VS-CPH6006L-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
1N5625-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
MBR40040CTRL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
SL345A-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 100 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 3 A
MBR30030CTRL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-25FR20
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 12 MA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 78 A
RS07J-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 700 MA