FST6360M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
Electronic components
1N5189US/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 9 A
MBRT500200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-ETX1506FP-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 36 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 3.4 V @ 15 A
MBRF30030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5951
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 MA @ 500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 15 A
FST6330M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
US2KA
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1.5 A
MBR20150SCTF-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
MBRF1645-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 630 MV @ 16 A
MBRT40045L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB060MM-60TFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 50 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 610 MV @ 2 A
MBRF300100R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-16FR100
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 12 MA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.23 V @ 50 A
DCG010-TL-E
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
VS-ETL1506-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.07 V @ 15 A
MBRF20060R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5822
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 25 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 12 A