NRVBD640CTT4G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
Electronic components
BAT54AT-7-G
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 150°C
1N5817 BK PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 1 MA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
FEP6DT-5410HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAL99,215
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 70 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
BYV32-150801HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 18A
- Operating Temperature - Junction
- -65°C ~ 150°C
V2NL63HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 2 A
BAS40W-04-7-F-79
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
IMBD4148-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2.5 µA @ 70 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
GE2X10MPS06D
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 23A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
SF14G-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
FEP16GT-5300HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS16WS-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
BYV32EB-200PQ
- Manufacturer
- WeEn Semiconductors
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 150°C (Max)
HER108G-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
FEP16CT-5001HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
RBR1MM30ATFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 480 MV @ 1 A