B0540WQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 20 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 510 MV @ 500 MA
Electronic components
UGB15HT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 500 V
- Operating Temperature - Junction
- -55°C ~ 150°C
V3NM103-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 120 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 690 MV @ 3 A
MBR6035PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 60A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
BAV102
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
SBT60100CT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBR18AFC_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 1 A
FESE16AT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Operating Temperature - Junction
- -65°C ~ 150°C
ES1DAL
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
MURHB840CTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -65°C ~ 175°C
S1MLS
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1.2 A
SBR10150CTFP-JT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -65°C ~ 150°C
BAT43WS RRG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
UGF10L08GA
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
MB210_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 2 A
TRS20N65FB,S1F(S
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 10A (DC)
- Operating Temperature - Junction
- 175°C (Max)
PMEG4005EGWX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 500 MA
BAS581-02V-HG3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA