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GD30MPS06H

GD30MPS06H

Product information

Manufacturer:
GeneSiC Semiconductor
Part number:
GD30MPS06H
Operating Temperature - Junction:
-55°C ~ 175°C
Capacitance @ Vr, F:
735pF @ 1V, 1MHz

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Technical specifications

Same model · consistent parameters

Product identity

ParameterValue
CategoryDiscrete Semiconductor Products Diodes Rectifiers Single Diodes
SeriesSiC Schottky MPS™
ManufacturerGeneSiC Semiconductor
Base Product NumberGD30MPS06

Electrical characteristics

ParameterValue
Operating Temperature - Junction-55°C ~ 175°C
Capacitance @ Vr, F735pF @ 1V, 1MHz
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)49A
SpeedNo Recovery Time > 500mA (Io)

Package & mechanical

ParameterValue
Mounting TypeThrough Hole
Supplier Device PackageTO-247-2
Package / CaseTube

Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.

Product overview

A localized overview is not yet available. The model-specific parameters are shown below.

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GD30MPS06H

GD30MPS06H

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