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GAP3SLT33-214

GAP3SLT33-214

Product information

Manufacturer:
GeneSiC Semiconductor
Part number:
GAP3SLT33-214
Current - Reverse Leakage @ Vr:
10 µA @ 3300 V
Voltage - Forward (Vf) (Max) @ If:
2.2 V @ 300 MA

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Technical specifications

Same model · consistent parameters

Product identity

ParameterValue
CategoryDiscrete Semiconductor Products Diodes Rectifiers Single Diodes
SeriesSiC Schottky MPS™
ManufacturerGeneSiC Semiconductor
Base Product NumberGAP3SLT33

Electrical characteristics

ParameterValue
Current - Reverse Leakage @ Vr10 µA @ 3300 V
Voltage - Forward (Vf) (Max) @ If2.2 V @ 300 MA
Capacitance @ Vr, F42pF @ 1V, 1MHz
Reverse Recovery Time (trr)0 Ns
TechnologySiC (Silicon Carbide) Schottky
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)3300 V
Current - Average Rectified (Io)300mA
SpeedNo Recovery Time > 500mA (Io)

Package & mechanical

ParameterValue
Mounting TypeSurface Mount
Supplier Device PackageDO-214AA
Package / CaseTape & Reel (TR) Cut Tape (CT)

Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.

Product overview

A localized overview is not yet available. The model-specific parameters are shown below.

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GAP3SLT33-214

GAP3SLT33-214

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