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GP3D010A170B

GP3D010A170B

Product information

Manufacturer:
SemiQ
Part number:
GP3D010A170B
Current - Reverse Leakage @ Vr:
40 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 10 A

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Technical specifications

Same model · consistent parameters

Product identity

ParameterValue
CategoryDiscrete Semiconductor Products Diodes Rectifiers Single Diodes
SeriesAmp+™
ManufacturerSemiQ
Base Product NumberGP3D010

Electrical characteristics

ParameterValue
Current - Reverse Leakage @ Vr40 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If1.65 V @ 10 A
Capacitance @ Vr, F699pF @ 1V, 1MHz
Reverse Recovery Time (trr)0 Ns
TechnologySiC (Silicon Carbide) Schottky
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1700 V
Current - Average Rectified (Io)67A
SpeedNo Recovery Time > 500mA (Io)

Package & mechanical

ParameterValue
Mounting TypeThrough Hole
Supplier Device PackageTO-247-2
Package / CaseTube

Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.

Product overview

A localized overview is not yet available. The model-specific parameters are shown below.

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GP3D010A170B

GP3D010A170B

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