Products
IDWD10G120C5XKSA1
IDWD10G120C5XKSA1
Product information
- Manufacturer:
- Infineon Technologies
- Part number:
- IDWD10G120C5XKSA1
- Current - Reverse Leakage @ Vr:
- 80 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.65 V @ 10 A
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Diodes Rectifiers Single Diodes |
| Series | CoolSiC™+ |
| Manufacturer | Infineon Technologies |
| Base Product Number | IDWD10 |
Electrical characteristics
| Parameter | Value |
|---|---|
| Current - Reverse Leakage @ Vr | 80 µA @ 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A |
| Capacitance @ Vr, F | 730pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 Ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 34A |
| Speed | No Recovery Time > 500mA (Io) |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-2 |
| Package / Case | Tube |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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