Products
1SS307E
1SS307E,L3F
Product information
- Manufacturer:
- Toshiba Semiconductor And Storage
- Part number:
- 1SS307E
- Current - Reverse Leakage @ Vr:
- 10 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.3 V @ 100 MA
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Diodes Rectifiers Single Diodes |
| Manufacturer | Toshiba Semiconductor And Storage |
| Base Product Number | 1SS307 |
Electrical characteristics
| Parameter | Value |
|---|---|
| Current - Reverse Leakage @ Vr | 10 NA @ 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 MA |
| Capacitance @ Vr, F | 6pF @ 0V, 1MHz |
| Technology | Standard |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Current - Average Rectified (Io) | 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-79 |
| Package / Case | Tape & Reel (TR) Cut Tape (CT) |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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